Radio frequency module and communication device

ABSTRACT

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a first power amplifier disposed on the first principal surface and configured to amplify a transmission signal in a first frequency band; a second power amplifier disposed on the first principal surface and configured to amplify a transmission signal in a second frequency band different from the first frequency band; and a switch disposed on the second principal surface and connected to an output terminal of the first power amplifier and an output terminal of the second power amplifier.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. application Ser. No.17/207,742, filed Mar. 22, 2021, which is based on and claims priorityof Japanese Patent Application No. 2020-057626 filed on Mar. 27, 2020.The entire disclosure of the above-identified applications, includingthe specification, drawings and claims are incorporated herein byreference in its entirety.

TECHNICAL FIELD

The present disclosure relates to a radio frequency module and acommunication device.

BACKGROUND

A power amplifier that amplifies radio frequency transmission signals isprovided in a mobile communication apparatus such as a mobile phone.Japanese Unexamined Patent Application Publication No. 2018-137522discloses a front end circuit (a radio frequency (RF) module) thatincludes a power amplifier (PA) circuit (a transmission amplifiercircuit) that transfers a transmission signal, and a low noise amplifier(LNA) circuit (a reception amplifier circuit) that transfers a receptionsignal. A PA controller that controls amplification characteristics of apower amplifier is disposed in the transmission amplifier circuit, andan LNA controller that controls amplification characteristics of a lownoise amplifier is disposed in the reception amplifier circuit.

SUMMARY Technical Problems

However, as recognized by the present inventor, amplificationperformance of a power amplifier is optimized in a specific frequencyband (a communication band), and thus the RF module disclosed inJapanese Unexamined Patent Application Publication No. 2018-137522 needsto include power amplifiers that handle signals in frequency bands(communication bands). Consequently, development in multiband technologybrings a problem that the size of an RF module increases due to anincrease in the number of power amplifiers.

The present disclosure has been conceived in order to solve theabove-identified and other problems, and provides a small radiofrequency module and a small communication device that support multibandtechnology.

Solutions

In order to provide such a radio frequency module, a radio frequencymodule according to an aspect of the present disclosure includes: amodule board that includes a first principal surface and a secondprincipal surface on opposite sides of the module board; a first poweramplifier disposed on the first principal surface and configured toamplify a transmission signal in a first frequency band; a second poweramplifier disposed on the first principal surface and configured toamplify a transmission signal in a second frequency band different fromthe first frequency band; and a first switch disposed on the secondprincipal surface and connected to an output terminal of the first poweramplifier and an output terminal of the second power amplifier.

Advantageous Effects

According to the present disclosure, a small radio frequency module anda small communication device that support multiband technology areprovided.

BRIEF DESCRIPTION OF DRAWINGS

These and other advantages and features will become apparent from thefollowing description thereof taken in conjunction with the accompanyingDrawings, by way of non-limiting examples of embodiments disclosedherein.

FIG. 1 illustrates a circuit configuration of a radio frequency moduleand a communication device according to an embodiment.

FIG. 2 illustrates a circuit configuration of a transmission amplifiercircuit.

FIG. 3A is a schematic diagram illustrating a planar configuration of aradio frequency module (or RF front-end circuitry) according to Example1.

FIG. 3B is a schematic diagram illustrating a cross-sectionalconfiguration of the radio frequency module according to Example 1.

FIG. 4A is a schematic diagram illustrating a cross-sectionalconfiguration of an output transformer according to Variation 1.

FIG. 4B is a schematic diagram illustrating a cross-sectionalconfiguration of an output transformer according to Variation 2.

FIG. 4C is a schematic diagram illustrating a cross-sectionalconfiguration of an output transformer according to Variation 3.

FIG. 5 is a schematic diagram illustrating a cross-sectionalconfiguration of a radio frequency module according to Variation 4.

FIG. 6 is a schematic diagram illustrating a planar configuration of aradio frequency module according to Example 2.

DESCRIPTION OF EMBODIMENTS

The following describes in detail embodiments of the present disclosure.Note that the embodiments described below each show a general orspecific example. The numerical values, shapes, materials, elements, andthe arrangement and connection of the elements, for instance, describedin the following embodiments are examples, and thus are not intended tolimit the present disclosure. Among the elements in the followingexamples and variations, elements not recited in any of the independentclaims are described as arbitrary elements. In addition, the sizes ofelements and the ratios of the sizes illustrated in the drawings are notnecessarily accurate. Throughout the drawings, the same numeral is givento substantially the same element, and redundant description may beomitted or simplified.

In the following, a term that indicates a relation between elements suchas “parallel” or “perpendicular”, a term that indicates the shape of anelement such as “rectangular”, and a numerical range do not necessarilyhave only strict meanings, and also cover substantially equivalentranges that include a difference of about several percent, for example.

In the following, regarding A, B, and C mounted on a board, “C isdisposed between A and B in a plan view of a board (or a principalsurface of a board)” means at least one of line segments that connectarbitrary points in A and B passes through a region of C in a plan viewof a board. A plan view of a board means that a board and a circuitelement mounted on the board are viewed, being orthogonally projectedonto a plane parallel to a principal surface of the board. In addition,“on” in expressions such as mounted on, disposed on, provided on, andformed on, for example, does not necessarily indicate direct contact.

In the following, a “transmission path” means a transfer route thatincludes, for instance, a line through which a radio frequencytransmission signal propagates, an electrode directly connected to theline, and a terminal directly connected to the line or the electrode.Further, a “reception path” means a transfer route that includes, forinstance, a line through which a radio frequency reception signalpropagates, an electrode directly connected to the line, and a terminaldirectly connected to the line or the electrode. In addition, a“transmission and reception path” means a transfer route that includes,for instance, a line through which a radio frequency transmission signaland a radio frequency reception signal propagate, an electrode directlyconnected to the line, and a terminal directly connected to the line orthe electrode.

Embodiment [1. Circuit Configuration of Radio Frequency Module 1 andCommunication Device 5]

FIG. 1 illustrates a circuit configuration of radio frequency module 1and communication device 5 according to an embodiment. As illustrated inFIG. 1, communication device 5 includes radio frequency module 1,antenna 2, radio frequency (RF) signal processing circuit (RF integratedcircuit (RFIC)) 3, and baseband signal processing circuit (BB integratedcircuit (BBIC)) 4.

RFIC 3 is an RF signal processing circuit that processes radio frequencysignals transmitted and received by antenna 2. Specifically, RFIC 3processes a reception signal input through a reception path of radiofrequency module 1 by down-conversion, for instance, and outputs areception signal generated by being processed to BBIC 4. RFIC 3processes a transmission signal input from BBIC 4 by up-conversion, forinstance, and outputs a transmission signal generated by being processedto a transmission path of radio frequency module 1.

BBIC 4 is a circuit that processes signals using an intermediatefrequency band lower than the frequency range of a radio frequencysignal transferred in radio frequency module 1. A signal processed byBBIC 4 is used, for example, as an image signal for image display or asan audio signal for talk through a loudspeaker.

RFIC 3 also functions as a controller that controls connection made byswitches 41 42, 43, and 44 included in radio frequency module 1, basedon a communication band (a frequency band) to be used. Specifically,RFIC 3 changes connection made by switches 41 to 44 included in radiofrequency module 1 according to control signals (not illustrated).Specifically, RFIC 3 outputs digital control signals for controllingswitches 41 to 44 to power amplifier (PA) control circuit 80. PA controlcircuit 80 of radio frequency module 1 controls connection anddisconnection of switches 41 to 44 by outputting digital control signalsto switches 41 to 44 according to the digital control signals input fromRFIC 3.

RFIC 3 also functions as a controller that controls gains oftransmission amplifier circuits 10 and 20 included in radio frequencymodule 1, and power supply voltage Vcc and bias voltage Vbias that aresupplied to transmission amplifier circuits 10 and 20. Specifically,RFIC 3 outputs digital control signals to control signal terminal 140 ofradio frequency module 1. PA control circuit 80 of radio frequencymodule 1 adjusts gains of transmission amplifier circuits 10 and 20 byoutputting control signals, power supply voltage Vcc, or bias voltageVbias to transmission amplifier circuits 10 and 20 according to digitalcontrol signals input through control signal terminal 140. Note that acontrol signal terminal that receives, from RFIC 3, digital controlsignals for controlling gains of transmission amplifier circuits 10 and20 and a control signal terminal that receives, from RFIC 3, digitalcontrol signals for controlling power supply voltage Vcc and biasvoltage Vbias that are supplied to transmission amplifier circuits 10and 20 may be different terminals. The controller may be disposedoutside of RFIC 3, and may be disposed in BBIC 4, for example.

Antenna 2 is connected to antenna connection terminal 100 of radiofrequency module 1, radiates a radio frequency signal output from radiofrequency module 1, and receives and outputs a radio frequency signalfrom the outside to radio frequency module 1.

Note that antenna 2 and BBIC 4 are not necessarily included incommunication device 5 according to the present embodiment.

Next, a detailed configuration of radio frequency module 1 is to bedescribed.

As illustrated in FIG. 1, radio frequency module 1 includes antennaconnection terminal 100, transmission amplifier circuits 10 and 20, lownoise amplifier 30, transmission filters 61T, 62T, and 63T, receptionfilters 61R, 62R, and 63R, PA control circuit 80, matching circuits 51,52, 53, and 54, and switches 41, 42, 43, and 44.

Antenna connection terminal 100 is an antenna common terminal connectedto antenna 2.

Transmission amplifier circuit 10 is a difference amplifying typeamplifier circuit that amplifies transmission signals in communicationbands A and B input through transmission input terminals 111 and 112.Note that radio frequency module 1 may include, instead of transmissionamplifier circuit 10, a first transmission amplifier circuit thatamplifies a radio frequency signal in communication band A, and a secondtransmission amplifier circuit that amplifies a radio frequency signalin communication band B.

Transmission amplifier circuit 20 is a difference amplifying typeamplifier circuit that amplifies transmission signals in communicationband C input through transmission input terminals 121 and 122.

PA control circuit 80 adjusts gains of amplifying elements included intransmission amplifier circuits 10 and 20 according to, for instance,digital control signals input through control signal terminal 140. PAcontrol circuit 80 may be formed as a semiconductor integrated circuit(IC). A semiconductor IC includes a complementary metal oxidesemiconductor (CMOS), for example, and specifically, formed by a siliconon insulator (SOI) process. Accordingly, such a semiconductor IC can bemanufactured at a low cost. Note that the semiconductor IC may includeat least one of gallium arsenide (GaAs), silicon germanium (SiGe), orgallium nitride (GaN). Thus, a radio frequency signal having highamplification quality and high noise quality can be output.

Low noise amplifier 30 amplifies radio frequency signals incommunication bands A, B, and C while noise is kept low, and outputs theamplified radio frequency signals to reception output terminal 130. Notethat radio frequency module 1 may include a plurality of low noiseamplifiers. For example, radio frequency module 1 may include a firstlow noise amplifier that amplifies radio frequency signals incommunication bands A and B, and a second low noise amplifier thatamplifies a radio frequency signal in communication band C.

Note that in the present embodiment, communication bands A and B arelower than communication band C, communication bands A and B belong to,for example, a middle band group (ranging from 1.45 GHz to 2.2 GHz), andcommunication band C belongs to, for example, a high band group (rangingfrom 2.3 GHz to 2.7 GHz). Note that which of communication bands A, B,and C is the highest, the second highest, and the lowest is not limitedto the above example, and communication bands A and B may be higher thancommunication band C. Note that the middle band group is an example of afirst frequency band, and communication band C is an example of a secondfrequency band different from the first frequency band.

Transmission filter 61T is disposed on transmission path AT thatconnects transmission input terminals 111 and 112 and antenna connectionterminal 100, and passes a transmission signal in the transmission bandof communication band A, within a transmission signal amplified bytransmission amplifier circuit 10. Transmission filter 62T is disposedon transmission path BT that connects transmission input terminals 111and 112 and antenna connection terminal 100, and passes a transmissionsignal in the transmission band of communication band B, within atransmission signal amplified by transmission amplifier circuit 10.Transmission filter 63T is disposed on transmission path CT thatconnects transmission input terminals 121 and 122 and antenna connectionterminal 100, and passes a transmission signal in the transmission bandof communication band C, within a transmission signal amplified bytransmission amplifier circuit 20.

Reception filter 61R is disposed on reception path AR that connectsreception output terminal 130 and antenna connection terminal 100, andpasses a reception signal in the reception band of communication band A,within a reception signal input through antenna connection terminal 100.Reception filter 62R is disposed on reception path BR that connectsreception output terminal 130 and antenna connection terminal 100, andpasses a reception signal in the reception band of communication band B,within a reception signal input through antenna connection terminal 100.Reception filter 63R is disposed on reception path CR that connectsreception output terminal 130 and antenna connection terminal 100, andpasses a reception signal in the reception band of communication band C,within a reception signal input through antenna connection terminal 100.

Transmission filter 61T and reception filter 61R constitute duplexer 61having a passband that is communication band A. Duplexer 61 transfers atransmission signal and a reception signal in communication band A byfrequency division duplex (FDD). Transmission filter 62T and receptionfilter 62R constitute duplexer 62 having a passband that iscommunication band B. Duplexer 62 transfers a transmission signal and areception signal in communication band B by FDD. Transmission filter 63Tand reception filter 63R constitute duplexer 63 having a passband thatis communication band C. Duplexer 63 transfers a transmission signal anda reception signal in communication band C by FDD.

Note that duplexers 61 to 63 may each be a multiplexer that includesonly a plurality of transmission filters, a multiplexer that includesonly a plurality of reception filters, or a multiplexer that includes aplurality of duplexers. Transmission filter 61T and reception filter 61Rmay not constitute duplexer 61, and may be a single filter for signalstransferred by time division duplex (TDD). In this case, one or moreswitches that switch between transmission and reception are disposedupstream, disposed downstream, or disposed upstream and downstream fromthe single filter. Similarly, transmission filter 62T and receptionfilter 62R may not constitute duplexer 62, and may be a single filterfor signals transferred by TDD. Similarly, transmission filter 63T andreception filter 63R may not constitute duplexer 63, and may be a singlefilter for signals transferred by TDD.

Matching circuit 51 is disposed on a path that connects switch 44 andduplexer 61, and matches the impedance between (i) duplexer 61 and (ii)switch 44 and antenna 2. Matching circuit 52 is disposed on a path thatconnects switch 44 and duplexer 62, and matches the impedance between(i) duplexer 62 and (ii) switch 44 and antenna 2. Matching circuit 53 isdisposed on a path that connects switch 44 and duplexer 63, and matchesthe impedance between (i) duplexer 63 and (ii) switch 44 and antenna 2.

Matching circuit 54 is disposed on a reception path that connects lownoise amplifier 30 and switch 43, and matches the impedance between (i)low noise amplifier 30 and (ii) switch 43 and duplexers 61 to 63.

Switch 41 includes common terminals 41 a and 41 b and selectionterminals 41 c, 41 d, 41 e, and 41 f. Common terminal 41 a is connectedto input terminal 115 of transmission amplifier circuit 10. Commonterminal 41 b is connected to input terminal 125 of transmissionamplifier circuit 20. Selection terminal 41 c is connected totransmission input terminal 111, selection terminal 41 d is connected totransmission input terminal 112, selection terminal 41 e is connected totransmission input terminal 121, and selection terminal 41 f isconnected to transmission input terminal 122. Switch 41 is disposed onan input terminal side of transmission amplifier circuits 10 and 20.This connection configuration allows switch 41 to switch connection oftransmission amplifier circuit 10 between transmission input terminal111 and transmission input terminal 112, and to switch connection oftransmission amplifier circuit 20 between transmission input terminal121 and transmission input terminal 122. Switch 41 includes a doublepole four throw (DP4T) switch circuit, for example.

Note that switch 41 may include a single pole double throw (SPDT) switchthat includes common terminal 41 a and selection terminals 41 c and 41d, and an SPDT switch that includes common terminal 41 b and selectionterminals 41 e and 41 f.

A transmission signal in communication band A, for example, is inputthrough transmission input terminal 111, and a transmission signal incommunication band B, for example, is input through transmission inputterminal 112. Further, transmission signals in communication band C, forexample, are input through transmission input terminals 121 and 122.

A transmission signal in communication band A or B in the fourthgeneration mobile communication system (4G), for example, may be inputthrough transmission input terminal 111, and a transmission signal incommunication band A or B in the fifth generation mobile communicationsystem (5G), for example, may be input through transmission inputterminal 112. Further, a transmission signal in communication band C in4G, for example, may be input through transmission input terminal 121,and a transmission signal in communication band C in 5G, for example,may be input through transmission input terminal 122.

Note that switch 41 may be an SPDT switch circuit in which the commonterminal is connected to a transmission input terminal (referred to as afirst transmission input terminal) out of transmission input terminals111, 112, 121, and 122, one selection terminal is connected to inputterminal 115 of transmission amplifier circuit 10, and the otherselection terminal is connected to input terminal 125 of transmissionamplifier circuit 20.

In this case, for example, a transmission signal in one of communicationbands A, B, and C is selectively input through the first transmissioninput terminal, and switch 41 switches connection of the firsttransmission input terminal between transmission amplifier circuit 10and transmission amplifier circuit 20 according to an input transmissionsignal. A 4G transmission signal and a 5G transmission signal, forexample, may be input through the first transmission input terminal, andswitch 41 may switch connection of the first transmission input terminalbetween transmission amplifier circuit 10 and transmission amplifiercircuit 20 according to an input transmission signal.

Switch 41 may include a double pole double throw (DPDT) switch circuitthat includes two common terminals and two selection terminals. In thiscase, the first transmission input terminal is connected to one of thecommon terminals, and a second transmission input terminal is connectedto the other common terminal. One of the selection terminals isconnected to transmission amplifier circuit 10, and the other selectionterminal is connected to transmission amplifier circuit 20. Thisconnection configuration allows switch 41 to switch connection of theone common terminal between the one selection terminal and the otherselection terminal, and switches connection of the other common terminalbetween the one selection terminal and the other selection terminal.

In this case, for example, a transmission signal in communication band Aor B is input through the first transmission input terminal, and atransmission signal in communication band C is input through the secondtransmission input terminal. For example, a 4G transmission signal maybe input through the first transmission input terminal, and a 5Gtransmission signal may be input through the second transmission inputterminal.

Switch 42 is an example of a first switch, and is connected to an outputterminal of power amplifier 10A via output transformer 15 describedbelow and also to an output terminal of power amplifier 20A via outputtransformer 25 described below. Switch 42 includes common terminals 42 aand 42 b and selection terminals 42 c, 42 d, and 42 e. Common terminal42 a is connected to output terminal 116 of transmission amplifiercircuit 10, and common terminal 42 b is connected to output terminal 126of transmission amplifier circuit 20. Selection terminal 42 c isconnected to transmission filter 61T, selection terminal 42 d isconnected to transmission filter 62T, and selection terminal 42 e isconnected to transmission filter 63T. Switch 42 is disposed on an outputterminal side of transmission amplifier circuits 10 and 20. Thisconnection configuration allows switch 42 to switch connection oftransmission amplifier circuit 10 between transmission filter 61T andtransmission filter 62T, and switches between connection anddisconnection of transmission amplifier circuit 20 to/from transmissionfilter 63T. Switch 42 includes a double pole three throw (DP3T) switchcircuit, for example.

Note that switch 42 may include an SPDT switch that includes commonterminal 42 a and selection terminals 42 c and 42 d, and a single polesingle throw (SPST) switch that includes common terminal 42 b andselection terminal 42 e. The numbers of common terminals and selectionterminals included in switch 42 are determined as appropriate accordingto the number of transmission paths that radio frequency module 1 has.

Switch 43 includes common terminal 43 a and selection terminals 43 b, 43c, and 43 d. Common terminal 43 a is connected to an input terminal oflow noise amplifier 30 via matching circuit 54. Selection terminal 43 bis connected to reception filter 61R, selection terminal 43 c isconnected to reception filter 62R, and selection terminal 43 d isconnected to reception filter 63R. This connection configuration allowsswitch 43 to switch between connection and disconnection of low noiseamplifier 30 to/from reception filter 61R, switch between connection anddisconnection of low noise amplifier 30 to/from reception filter 62R,and switch between connection and disconnection of low noise amplifier30 to/from reception filter 63R. Switch 43 includes a single pole threethrow (SP3T) switch circuit, for example.

Switch 44 is an example of an antenna switch, is connected to antennaconnection terminal 100, and switches among (1) connection of antennaconnection terminal 100 to transmission path AT and reception path AR,(2) connection of antenna connection terminal 100 to transmission pathBT and reception path BR, and (3) connection of antenna connectionterminal 100 to transmission path CT and reception path CR. Note thatswitch 44 includes a multiple connection switch circuit that allowssimultaneous connections of at least two of (1) to (3) above.

Note that transmission filters 61T to 63T and reception filters 61R to63R described above may each be one of, for example, an acoustic wavefilter that uses surface acoustic waves (SAWs), an acoustic wave filterthat uses bulk acoustic waves (BAWs), an inductor-capacitor (LC)resonance filter, and a dielectric filter, and furthermore, are notlimited to those filters.

Matching circuits 51 to 54 are not necessarily included in the radiofrequency module according to the present disclosure.

Matching circuits may be disposed between transmission amplifier circuit10 and switch 42 and between transmission amplifier circuit 20 andswitch 42. A diplexer and/or a coupler, for instance, may be disposedbetween antenna connection terminal 100 and switch 44.

In the configuration of radio frequency module 1, transmission amplifiercircuit 10, switch 42, transmission filter 61T, matching circuit 51, andswitch 44 are included in a first transmission circuit that transferstransmission signals in communication band A toward antenna connectionterminal 100. Further, switch 44, matching circuit 51, reception filter61R, switch 43, matching circuit 54, and low noise amplifier 30 areincluded in a first reception circuit that transfers reception signalsin communication band A from antenna 2 through antenna connectionterminal 100.

Transmission amplifier circuit 10, switch 42, transmission filter 62T,matching circuit 52, and switch 44 are included in a second transmissioncircuit that transfers transmission signals in communication band Btoward antenna connection terminal 100. Further, switch 44, matchingcircuit 52, reception filter 62R, switch 43, matching circuit 54, andlow noise amplifier 30 are included in a second reception circuit thattransfers reception signals in communication band B from antenna 2through antenna connection terminal 100.

Transmission amplifier circuit 20, switch 42, transmission filter 63T,matching circuit 53, and switch 44 are included in a third transmissioncircuit that transfers transmission signals in communication band Ctoward antenna connection terminal 100. Further, switch 44, matchingcircuit 53, reception filter 63R, switch 43, matching circuit 54, andlow noise amplifier 30 are included in a third reception circuit thattransfers reception signals in communication band C from antenna 2through antenna connection terminal 100.

According to the above circuit configuration, radio frequency module 1can carry out at least one of transmission, reception, or transmissionand reception of a radio frequency signal in communication band A, B, orC. Furthermore, radio frequency module 1 can carry out at least one ofsimultaneous transmission, simultaneous reception, or simultaneoustransmission and reception of radio frequency signals in communicationbands A, B, and C.

Note that in the radio frequency module according to the presentdisclosure, the three transmission circuits and the three receptioncircuits may not be connected to antenna connection terminal 100 viaswitch 44, and may be connected to antenna 2 via different terminals. Itis sufficient if the radio frequency module according to the presentdisclosure includes PA control circuit 80, the first transmissioncircuit, and the third transmission circuit.

In the radio frequency module according to the present disclosure, it issufficient if the first transmission circuit includes transmissionamplifier circuit 10. It is sufficient if the third transmission circuitincludes transmission amplifier circuit 20.

Low noise amplifier 30 and at least one switch out of switches 41 to 44may be formed in a single semiconductor IC. The semiconductor ICincludes a CMOS, for example, and is specifically formed by the SOIprocess. Accordingly, such a semiconductor IC can be manufactured at alow cost. Note that the semiconductor IC may include at least one ofGaAs, SiGe, or GaN. Thus, a radio frequency signal having highamplification quality and high noise quality can be output.

FIG. 2 illustrates a circuit configuration of transmission amplifiercircuit 10 according to the embodiment. As illustrated in FIG. 2,transmission amplifier circuit 10 includes input terminal 115, outputterminal 116, amplifying element 12 (a first amplifying element),amplifying element 13 (a second amplifying element), amplifying element11 (an upstream amplifying element), interstage transformer(transformer) 14, capacitor 16, and output transformer(unbalance-balance transforming element) 15. Amplifying elements 11 to13, interstage transformer 14, and capacitor 16 are included in poweramplifier 10A. Power amplifier 10A is an example of a first poweramplifier.

Interstage transformer 14 includes primary coil 14 a and secondary coil14 b.

An input terminal of amplifying element 11 is connected to inputterminal 115, and an output terminal of amplifying element 11 isconnected to an unbalance terminal of interstage transformer 14. Onebalance terminal of interstage transformer 14 is connected to an inputterminal of amplifying element 12, and another balance terminal ofinterstage transformer 14 is connected to an input terminal ofamplifying element 13.

A radio frequency signal input through input terminal 115 is amplifiedby amplifying element 11 in a state in which bias voltage Vcc1 isapplied to amplifying element 11. Interstage transformer 14 applies anunbalance-balance transform (i.e., a transformation of an unbalancedline to a balanced line that carries non-inverted and inverted versionsof the signal) to the amplified radio frequency signal. At this time, anon-inverted input signal is output through the one balance terminal ofinterstage transformer 14, and an inverted input signal is outputthrough the other balance terminal of interstage transformer 14.

Output transformer 15 is an example of a first output transformer, andincludes primary coil (first coil) 15 a and secondary coil (second coil)15 b. An end of primary coil 15 a is connected to an output terminal ofamplifying element 12, and the other end of primary coil 15 a isconnected to an output terminal of amplifying element 13. Bias voltageVcc2 is supplied to a middle point of primary coil 15 a. One end ofsecondary coil 15 b is connected to output terminal 116, and the otherend of secondary coil 15 b is connected to the ground. Stateddifferently, output transformer 15 is connected between (i) outputterminal 116 and (ii) the output terminal of amplifying element 12 andthe output terminal of amplifying element 13.

Capacitor 16 is connected between the output terminal of amplifyingelement 12 and the output terminal of amplifying element 13.

Respective impedances of lines that carry a non-inverted input signalamplified by amplifying element 12 and an inverted input signalamplified by amplifying element 13 are transformed by output transformer15 and capacitor 16 while the signals are maintained in antiphase (orantipodal phase relationship) with each other. Specifically, outputtransformer 15 and capacitor 16 match the output impedance of poweramplifier 10A at output terminal 116 to input impedance of switch 42 andtransmission filters 61T and 62T illustrated in FIG. 1. Note that acapacitive element connected between the ground and a path that connectsoutput terminal 116 and secondary coil 15 b contributes to the impedancematching. Further note that the capacitive element may be disposed inseries on the path that connects output terminal 116 and secondary coil15 b, or optionally need not be included.

Here, amplifying elements 11 to 13, interstage transformer 14, andcapacitor 16 constitute power amplifier 10A. In particular, amplifyingelements 11 to 13 and interstage transformer 14 are integrally formed invarious configurations such as being formed in a single chip or allmounted on a same substrate, for instance. In contrast, outputtransformer 15 needs to have a high Q factor to handle a high-powertransmission signal, and thus is not formed integrally with amplifyingelements 11 to 13 or interstage transformer 14, for instance. Stateddifferently, among circuit components included in transmission amplifiercircuit 10, circuit components except output transformer 15 are includedin power amplifier 10A.

Note that amplifying element 11 and capacitor 16 are not necessarilyincluded in power amplifier 10A.

According to the circuit configuration of transmission amplifier circuit10, amplifying elements 12 and 13 operate in antiphase relationship withrespect to each other. At this time, fundamental-wave currents flowthrough amplifying elements 12 and 13 in antiphase with each other, thatis, in opposite directions, and thus a resultant fundamental-wavecurrent does not flow into a ground line or a power supply line disposedat a substantially equal distance from amplifying elements 12 and 13.Accordingly, inflow of unnecessary (or undesired) currents to the abovelines can be avoided, and thus a decrease in power gain that isexperienced in a conventional transmission amplifier circuit can bereduced. Further, a non-inverted signal and an inverted signal amplifiedby amplifying elements 12 and 13 are combined, and thus noise componentssuperimposed similarly on the signals can be cancelled out, andunnecessary waves such as harmonic components, for example, can besuppressed.

Note that amplifying element 11 is not necessarily included intransmission amplifier circuit 10. An element that transforms anunbalanced input signal into a non-inverted input signal and an invertedinput signal is not limited to interstage transformer 14. Capacitor 16is optional for impedance matching.

Although not illustrated, transmission amplifier circuit 20 has asimilar circuit configuration to that of transmission amplifier circuit10 illustrated in FIG. 2. Specifically, transmission amplifier circuit20 includes input terminal 125, output terminal 126, amplifying element22 (a third amplifying element), amplifying element 23 (a fourthamplifying element), amplifying element 21 (an upstream amplifyingelement), interstage transformer (transformer) 24, capacitor 26, andoutput transformer (unbalance-balance transforming element) 25.Amplifying elements 21 to 23, interstage transformer 24, and capacitor26 are included in power amplifier 20A. Power amplifier 20A is anexample of a second power amplifier.

Interstage transformer 24 includes primary coil 24 a and secondary coil24 b.

An input terminal of amplifying element 21 is connected to inputterminal 125, and an output terminal of amplifying element 21 isconnected to an unbalance terminal of interstage transformer 24. Onebalance terminal of interstage transformer 24 is connected to an inputterminal of amplifying element 22, and another balance terminal ofinterstage transformer 24 is connected to an input terminal ofamplifying element 23.

Output transformer 25 is an example of a second output transformer, andincludes primary coil (third coil) 25 a and secondary coil (fourth coil)25 b. One end of primary coil 25 a is connected to an output terminal ofamplifying element 22, and the other end of primary coil 25 a isconnected to an output terminal of amplifying element 23. Bias voltageVcc2 is supplied to a middle point of primary coil 25 a. One end ofsecondary coil 25 b is connected to output terminal 126, and the otherend of secondary coil 25 b is connected to the ground. Stateddifferently, output transformer 25 is connected between (i) outputterminal 126 and (ii) the output terminal of amplifying element 22 andthe output terminal of amplifying element 23.

Capacitor 26 is connected between the output terminal of amplifyingelement 22 and the output terminal of amplifying element 23.

Here, amplifying elements 21 to 23, interstage transformer 24, andcapacitor 26 constitute power amplifier 20A. In particular, amplifyingelements 21 to 23 and interstage transformer 24 are integrally formed invarious configurations such as being formed in a single chip or allmounted on a same substrate, for instance. On the other hand, outputtransformer 25 is not integrally formed with amplifying elements 21 to23 or interstage transformer 24, for instance.

Note that amplifying element 21 and capacitor 26 are not necessarilyincluded in power amplifier 20A.

According to the circuit configuration of transmission amplifier circuit20, a decrease in power gain that is seen in a conventional transmissionamplifier circuit can be reduced. Further, a non-inverted signal and aninverted signal amplified by amplifying elements 22 and 23 are combined,and thus noise components superimposed similarly on the signals can becancelled out, and unnecessary waves such as harmonic components, forexample, can be decreased.

Note that amplifying element 21 is not necessarily included intransmission amplifier circuit 20. An element that transforms anunbalanced input signal into a non-inverted input signal and an invertedinput signal is not limited to interstage transformer 24. Capacitor 26is optional for impedance matching.

Amplifying elements 11 to 13 and 21 to 23 and low noise amplifier 30each include a field effect transistor (FET) or a hetero-bipolartransistor (HBT) made of a silicon-based CMOS or GaAs, for example.

Note that transmission amplifier circuit 10 may not include differenceamplifying type power amplifier 10A, and may be an amplifier thatincludes a so-called single-ended amplifying element that receives anunbalanced signal, and outputs an unbalanced signal. Further,transmission amplifier circuit 20 may not include difference amplifyingtype power amplifier 20A, and may be an amplifier that includes aso-called single-ended amplifying element that receives an unbalancedsignal, and outputs an unbalanced signal.

Here, in radio frequency module 1, transmission amplifier circuit 10amplifies transmission signals in communication bands A and B, andtransmission amplifier circuit 20 amplifies a transmission signal incommunication band C. Accordingly, amplification performance oftransmission amplifier circuits 10 and 20 is optimized in a specificfrequency band (a communication band), and thus radio frequency module 1needs to include a plurality of transmission amplifier circuits tohandle signals in frequency bands (communication bands). Development inmultiband technology that radio frequency module 1 supports brings aproblem that the size of radio frequency module 1 increases due to anincrease in the number of transmission amplifier circuits disposed. Ifthe elements are mounted densely for size reduction, a high-powertransmission signal output from a transmission amplifier circuitinterferes with a circuit component included in radio frequency module1, which leads to a problem that the quality of a radio frequency signaloutput from radio frequency module 1 deteriorates.

To address this, the following describes a configuration of small radiofrequency module 1 in which deterioration in quality of radio frequencysignals output from radio frequency module 1 is reduced.

[2. Arrangement of Circuit Elements of Radio Frequency Module 1AAccording to Example 1]

FIG. 3A is a schematic diagram illustrating a planar configuration ofradio frequency module 1A according to Example 1. FIG. 3B is a schematicdiagram illustrating a cross-sectional configuration of radio frequencymodule 1A according to Example 1, and specifically, illustrates a crosssection taken along line IIIB to IIIB in FIG. 3A. Note that (a) of FIG.3A illustrates a layout of circuit elements when principal surface 91 aout of principal surfaces 91 a and 91 b on opposite sides of moduleboard 91 is viewed from the positive z-axis. On the other hand, (b) ofFIG. 3A is a perspective view of a layout of circuit elements whenprincipal surface 91 b is viewed from the positive z-axis.

Radio frequency module 1A according to Example 1 shows a specificarrangement of circuit elements included in radio frequency module 1according to the embodiment.

As illustrated in FIGS. 3A and 3B, radio frequency module 1A accordingto this example further includes module board 91, resin members 92 and93, and external-connection terminals 150, in addition to the circuitconfiguration illustrated in FIG. 1.

Module board 91 is a board which includes principal surface 91 a (afirst principal surface) and principal surface 91 b (a second principalsurface) on opposite sides of module board 91, and on which thetransmission circuits and the reception circuits described above aremounted. As module board 91, one of a low temperature co-fired ceramics(LTCC) board, a high temperature co-fired ceramics (HTCC) board, acomponent-embedded board, a board that includes a redistribution layer(RDL), and a printed circuit board, each having a stacked structure of aplurality of dielectric layers, is used, for example.

Resin member 92 is provided on principal surface 91 a of module board91, covers at least partially the transmission circuits, at leastpartially the reception circuits, and principal surface 91 a of moduleboard 91, and has a function of ensuring reliability of mechanicalstrength and moisture resistance, for instance, of the circuit elementsincluded in the transmission circuits and the reception circuits. Resinmember 93 is provided on principal surface 91 b of module board 91,covers at least partially the transmission circuits, at least partiallythe reception circuits, and principal surface 91 b of module board 91,and has a function of ensuring reliability of mechanical strength andmoisture resistance, for instance, of the circuit elements included inthe transmission circuits and the reception circuits. Note that resinmembers 92 and 93 are not necessarily included in the radio frequencymodule according to the present disclosure.

As illustrated in FIGS. 3A and 3B, in radio frequency module 1Aaccording to this example, power amplifiers 10A and 20A, outputtransformers 15 and 25, duplexers 61, 62, and 63, and matching circuits51, 52, 53, and 54 are disposed on principal surface 91 a (the firstprincipal surface) of module board 91. On the other hand, PA controlcircuit 80, low noise amplifier 30, and switches 41, 42, 43, and 44 aredisposed on principal surface 91 b (the second principal surface) ofmodule board 91.

Note that although not illustrated in FIG. 3A, lines that extend astransmission paths AT, BT, and CT and reception paths AR, BR, and CRillustrated in FIG. 1 are formed inside of module board 91 and onprincipal surfaces 91 a and 91 b. The lines may each be a bonding wirehaving two ends each joined to any of principal surfaces 91 a and 91 band circuit elements included in radio frequency module 1A, or may eachbe a terminal, an electrode, or a line formed on a surface of a circuitelement included in radio frequency module 1A.

Thus, in this example, power amplifiers 10A and 20A are mounted onprincipal surface 91 a (the first principal surface). On the other hand,switch 42 is mounted on principal surface 91 b (the second principalsurface). Power amplifier 10A is an example of a first power amplifierthat amplifies a transmission signal in the first frequency band thatincludes communication bands A and B, and power amplifier 20A is anexample of a second power amplifier that amplifies a transmission signalin the second frequency band that includes communication band C. In thisexample, the first frequency band (communication bands A and B) may belower than the second frequency band (communication band C), and thefirst frequency band (communication bands A and B) may be higher thanthe second frequency band (communication band C).

According to the above configuration of radio frequency module 1Aaccording to this example, power amplifiers 10A and 20A and switch 42that passes output signals from power amplifiers 10A and 20A are mountedon the two sides, and thus radio frequency module 1A can beminiaturized. Switch 42 that has off-capacitance between a commonterminal and a selection terminal that are not connected and poweramplifiers 10A and 20A are disposed with module board 91 being locatedtherebetween. Accordingly, transmission signals output from poweramplifiers 10A and 20A can be prevented from leaking to an unconnectedtransmission or reception path via the off-capacitance. Consequently,deterioration in the quality of radio frequency signals output frompower amplifiers 10A and 20A can be reduced.

Furthermore, power amplifier 10A includes at least amplifying elements11 to 13 and interstage transformer 14, and power amplifier 20A includesat least amplifying elements 21 to 23 and interstage transformer 24.Consequently, the number of circuit elements increases, resulting in alarger mounting area. The size of radio frequency module 1A thus tendsto be increased. When transmission amplifier circuits 10 and 20 aredifference amplifying type amplifier circuits, a configuration in whichpower amplifiers 10A and 20A and switch 42 are separately disposed onthe two sides of module board 91 greatly contributes to reduction in thesize of radio frequency module 1A.

In radio frequency module 1A according to this example, in a plan viewof module board 91, desirably, a footprint of power amplifier 10A atleast partially overlaps a footprint of switch 42, and a footprint ofpower amplifier 20A at least partially overlaps the footprint of switch42.

According to this configuration, a transmission signal line thatconnects power amplifier 10A and switch 42 and a transmission signalline that connects power amplifier 20A and switch 42 can be shortened,and thus transfer loss of transmission signals can be reduced.

Note that output transformers 15 and 25, duplexers 61 to 63, andmatching circuits 51 to 54 are mounted on principal surface 91 a (thefirst principal surface), but may be mounted on principal surface 91 b(the second principal surface). Low noise amplifier 30, PA controlcircuit 80, and switches 41, 43, and 44 are mounted on principal surface91 b (the second principal surface), but may be mounted on principalsurface 91 a (the first principal surface).

Note that desirably, module board 91 has a multilayer structure in whicha plurality of dielectric layers are stacked, and a ground electrodepattern is formed on at least one of the dielectric layers. Accordingly,the electromagnetic field shielding function of module board 91improves.

In radio frequency module 1A according to this example,external-connection terminals 150 are disposed on principal surface 91 b(the second principal surface) of module board 91. Radio frequencymodule 1A exchanges electrical signals with a motherboard disposed onthe negative z-axis side of radio frequency module 1A, viaexternal-connection terminals 150. As illustrated in (b) of FIG. 3A, theexternal-connection terminals include antenna connection terminal 100,transmission input terminals 111, 112, 121, and 122, reception outputterminal 130, and control signal terminal 140. Potentials of some ofexternal-connection terminals 150 are set to the ground potential of themotherboard. On principal surface 91 b that faces the motherboard out ofprincipal surfaces 91 a and 91 b, power amplifiers 10A and 20A whoseheights are not readily decreased are not disposed, and low noiseamplifier 30, PA control circuit 80, and switches 41 to 44 whose heightsare readily decreased are disposed, and thus the height of radiofrequency module 1A as a whole can be decreased.

In radio frequency module 1A according to this example, power amplifiers10A and 20A are disposed on principal surface 91 a, and low noiseamplifier 30 is disposed on principal surface 91 b. According to this,power amplifiers 10A and 20A that amplify transmission signals and lownoise amplifier 30 that amplifies a reception signal are separatelydisposed on the two sides, and thus isolation between transmission andreception can be improved.

Further, as illustrated in FIGS. 3A and 3B, external-connectionterminals 150 having the ground potential are disposed between low noiseamplifier 30 and switch 42 disposed on principal surface 91 b (thesecond principal surface), in a plan view of module board 91.

According to this configuration, plural external-connection terminals150 used as ground electrodes are disposed between low noise amplifier30 that greatly affects reception sensitivity of the reception circuitsand switch 42 that passes high-power transmission signals, and thusdeterioration in reception sensitivity due to transmission signals andharmonics thereof, for instance, can be reduced.

Power amplifiers 10A and 20A are components that generate a great amountof heat, out of circuit components included in radio frequency module1A. In order to improve heat dissipation of radio frequency module 1A,it is important to dissipate heat generated by power amplifiers 10A and20A to the motherboard through heat dissipation paths having low heatresistance. If power amplifiers 10A and 20A are mounted on principalsurface 91 b, electrode lines connected to power amplifiers 10A and 20Aare disposed on principal surface 91 b. Accordingly, the heatdissipation paths include a heat dissipation path along only a planarline pattern (in the xy plane direction) on principal surface 91 b. Theplanar line pattern is formed of a thin metal film, and thus has highheat resistance. Accordingly, if power amplifiers 10A and 20A aredisposed on principal surface 91 b, heat dissipation deteriorates.

To address this, radio frequency module 1A according to this examplefurther includes heat-dissipating via-conductor 95V that is connected,on principal surface 91 a, to a ground electrode of power amplifier 10A,and extends from principal surface 91 a to principal surface 91 b, asillustrated in FIG. 3B. Heat-dissipating via-conductor 95V is connected,on principal surface 91 b, to external-connection terminal 150 havingthe ground potential out of external-connection terminals 150.

According to this configuration, when power amplifier 10A is mounted onprincipal surface 91 a, power amplifier 10A and external-connectionterminal 150 can be connected through heat-dissipating via-conductor95V. Accordingly, as heat dissipation paths for power amplifier 10A, aheat dissipation path extending along only a planar line pattern in thexy plane direction and having high heat resistance can be excluded fromlines on and in module board 91. Thus, miniaturized radio frequencymodule 1A having improved heat dissipation from power amplifier 10A tothe motherboard can be provided.

Note that FIG. 3B illustrates, as an example, a configuration in whichpower amplifier 10A, heat-dissipating via-conductor 95V, andexternal-connection terminal 150 are connected, yet radio frequencymodule 1A may have a configuration in which power amplifier 20A,heat-dissipating via-conductor 95V, and external-connection terminal 150are connected. Accordingly, miniaturized radio frequency module 1Ahaving improved heat dissipation from power amplifier 20A to themotherboard can be provided.

In radio frequency module 1A according to this example, outputtransformers 15 and 25 are disposed on principal surface 91 a, but maybe disposed on principal surface 91 b or inside of module board 91. Whenoutput transformers 15 and 25 are disposed inside of module board 91,inductors included in output transformers 15 and 25 are planar coilsformed by electric conduction patterns of module board 91, for example.In such arrangement of output transformers 15 and 25, footprints ofpower amplifiers 10A and 20A desirably do not overlap footprints ofoutput transformers 15 and 25, in a plan view of module board 91.

Output transformers 15 and 25 each need to have a high Q factor tohandle a high-power transmission signal, and thus desirably, magneticfields formed by output transformers 15 and 25 do not change due topower amplifiers 10A and 20A being adjacent thereto. Power amplifiers10A and 20A are not disposed in regions where the transformers aredisposed, and thus the Q factors of the inductors included in outputtransformers 15 and 25 can be maintained high.

In radio frequency module 1A according to this example, as illustratedin FIGS. 3A and 3B, desirably, output transformers 15 and 25 aredisposed on principal surface 91 a, and in a plan view of module board91, no circuit component is disposed in a region included in principalsurface 91 b and overlapping a footprint of output transformer 15, andno circuit component is disposed in a region included in principalsurface 91 b and overlapping a footprint of output transformer 25.Output transformers 15 and 25 are surface mount chip elements eachincluding a plurality of inductors, for example. Furthermore, outputtransformers 15 and 25 may be, for example, integrated passive devices(IPDs) in each of which one or more passive elements such as an inductorare mounted inside of or on the surface of a silicon substrate in anintegrated manner. When output transformers 15 and 25 are IPDs, radiofrequency module 1A can be further miniaturized.

Output transformers 15 and 25 each need to have a high Q factor tohandle a high-power transmission signal, and thus desirably, magneticfields formed by output transformers 15 and 25 do not change due toother circuit components being adjacent thereto. No circuit component isformed in regions where the transformers are disposed, and thus the Qfactors of the inductors included in output transformers 15 and 25 canbe maintained high.

Furthermore, in a plan view of module board 91, desirably, a groundelectrode layer is not formed in a region included in module board 91and overlapping formation regions in which output transformers 15 and 25are formed. According to this configuration, it can be ensured thatoutput transformers 15 and 25 are widely spaced apart from groundelectrodes, and thus the Q factors of the inductors included in outputtransformers 15 and 25 can be maintained high.

The formation regions in which output transformers 15 and 25 are formedare defined as follows. Note that the following describes the formationregion in which output transformer 15 is formed, yet the definition ofthe formation region in which output transformer 25 is formed is thesame as that of the formation region in which output transformer 15 isformed, and thus defining the formation region in which outputtransformer 25 is formed is omitted.

The formation region in which output transformer 15 is formed is aminimum region that includes a formation region in which primary coil 15a is formed and a formation region in which secondary coil 15 b isformed, in a plan view of module board 91.

Here, secondary coil 15 b is defined as a line conductor disposed alongprimary coil 15 a, in a section in which a first distance from primarycoil 15 a is substantially constant. At this time, portions of the lineconductor located on both sides of the above section are spaced apartfrom primary coil 15 a by a second distance longer than the firstdistance, and one end and the other end of secondary coil 15 b arepoints at which a distance from the line conductor to primary coil 15 achanges from the first distance to the second distance. Primary coil 15a is defined as a line conductor disposed along secondary coil 15 b, ina section in which the first distance from secondary coil 15 b issubstantially constant. At this time, portions of the line conductorlocated on both sides of the above section are spaced apart fromsecondary coil 15 b by the second distance longer than the firstdistance, and one end and the other end of primary coil 15 a are pointsat which a distance from the line conductor to secondary coil 15 bchanges from the first distance to the second distance.

Alternatively, secondary coil 15 b is defined as a line conductordisposed along primary coil 15 a, in a first section in which the linewidth is a substantially constant first width. Primary coil 15 a isdefined as a line conductor disposed along secondary coil 15 b, in thefirst section in which the line width is the substantially constantfirst width.

Alternatively, secondary coil 15 b is defined as a line conductordisposed along primary coil 15 a, in a first section in which thethickness is a substantially constant first thickness. Primary coil 15 ais defined as a line conductor disposed along secondary coil 15 b, inthe first section in which the thickness is the substantially constantfirst thickness.

Alternatively, secondary coil 15 b is defined as a line conductordisposed along primary coil 15 a, in a first section in which a degreeof coupling with primary coil 15 a is a substantially constant firstdegree of coupling. Further, primary coil 15 a is defined as a lineconductor disposed along secondary coil 15 b, in the first section inwhich a degree of coupling with secondary coil 15 b is the substantiallyconstant first degree of coupling.

FIG. 4A is a schematic diagram of a cross-sectional configurationillustrating the position of output transformer 15 in radio frequencymodule 1D according to Variation 1. FIG. 4A illustrates the position ofoutput transformer 15 in the cross-sectional configuration of radiofrequency module 1D according to Variation 1. Note that the arrangementof circuit components included in radio frequency module 1D other thanoutput transformers 15 and 25 is the same as that of radio frequencymodule 1A according to Example 1. In radio frequency module 1D, outputtransformers 15 and 25 are disposed on principal surface 91 b. In thiscase, desirably, no circuit component is disposed in regions included inprincipal surface 91 a and overlapping the formation regions in whichoutput transformers 15 and 25 are formed, in a plan view of module board91.

According to this configuration, no circuit component is disposed in theabove regions in principal surface 91 a, and thus decreases in the Qfactors of the inductors of output transformers 15 and 25 can bereduced.

FIG. 4B is a schematic diagram of a cross-sectional configurationillustrating the position of output transformer 15 in radio frequencymodule 1E according to Variation 2. FIG. 4B illustrates the position ofoutput transformer 15 in the cross-sectional configuration of radiofrequency module 1E according to Variation 2. Note that the arrangementof circuit components included in radio frequency module 1E other thanoutput transformers 15 and 25 is the same as that of radio frequencymodule 1A according to Example 1. In radio frequency module 1E, outputtransformers 15 and 25 are formed inside of module board 91, betweenprincipal surface 91 a and principal surface 91 b, and are offset towardprincipal surface 91 a. In this case, in a plan view of module board 91,no circuit component is disposed in a region included in principalsurface 91 a and overlapping the formation regions in which outputtransformers 15 and 25 are formed, and a circuit component may bedisposed in a region included in principal surface 91 b and overlappingthe formation regions in which output transformers 15 and 25 are formed.

Also in this case, no circuit component is disposed in the above regionsin principal surface 91 a closer to output transformers 15 and 25, andthus decreases in the Q factors of the inductors of output transformers15 and 25 can be reduced.

FIG. 4C is a schematic diagram of a cross-sectional configurationillustrating the position of output transformer 15 in radio frequencymodule 1F according to Variation 3. FIG. 4C illustrates the position ofoutput transformer 15 in the cross-sectional configuration of radiofrequency module 1F according to Variation 3. Note that the arrangementof circuit components included in radio frequency module 1F other thanoutput transformers 15 and 25 is the same as that of radio frequencymodule 1A according to Example 1. In radio frequency module 1F, outputtransformers 15 and 25 are formed inside of module board 91, betweenprincipal surface 91 a and principal surface 91 b, and are offset towardprincipal surface 91 b. In this case, in a plan view of module board 91,no circuit component is disposed in regions included in principalsurface 91 b and overlapping the formation regions in which outputtransformers 15 and 25 are formed, and one or more circuit components(not illustrated) may be disposed in regions included in principalsurface 91 a and overlapping the formation regions in which outputtransformers 15 and 25 are formed.

Also in this case, no circuit component is disposed in the above regionsin principal surface 91 b closer to output transformers 15 and 25, andthus decreases in the Q factors of the inductors of output transformers15 and 25 can be reduced.

Note that in each of radio frequency module 1E illustrated in FIG. 4Band radio frequency module 1F illustrated in FIG. 4C, in a plan view ofmodule board 91, more desirably, no circuit component is disposed inregions included in both principal surfaces 91 a and 91 b andoverlapping footprints of output transformers 15 and 25.

According to this configuration, decreases in the Q factors of theinductors of output transformers 15 and 25 can be further reduced.

In radio frequency module 1A according to this example, power amplifiers10A and 20A are disposed on principal surface 91 a, and switch 42 isdisposed on principal surface 91 b, yet power amplifiers 10A and 20A maybe disposed on principal surface 91 b, and switch 42 may be disposed onprincipal surface 91 a. This configuration also allows power amplifiers10A and 20A and switch 42 to be mounted on the two sides, and thus radiofrequency module 1A can be miniaturized. Switch 42 that hasoff-capacitance between a common terminal and a selection terminal thatare not connected and power amplifiers 10A and 20A are disposed withmodule board 91 being located therebetween. Accordingly, transmissionsignals output from power amplifiers 10A and 20A can be prevented fromleaking to an unconnected transmission or reception path via theoff-capacitance. Consequently, deterioration in the quality of radiofrequency signals output from power amplifiers 10A and 20A can bereduced.

In radio frequency module 1A according to this example, power amplifiers10A and 20A are disposed on principal surface 91 a (the first principalsurface). On the other hand, PA control circuit 80 is mounted onprincipal surface 91 b (the second principal surface).

According to this configuration, power amplifiers 10A and 20A, and PAcontrol circuit 80 that controls power amplifiers 10A and 20A aremounted on the two sides, and thus radio frequency module 1A can beminiaturized. PA control circuit 80 that receives and outputs digitalcontrol signals and power amplifiers 10A and 20A are disposed withmodule board 91 being located therebetween, and thus power amplifiers10A and 20A can be prevented from receiving digital noise. Accordingly,deterioration in the quality of radio frequency signals output frompower amplifiers 10A and 20A can be reduced.

In radio frequency module 1A according to this example, PA controlcircuit 80 and switches 41 and 42 are included in single semiconductorIC 70, and semiconductor IC 70 is disposed on principal surface 91 b.Accordingly, PA control circuit 80 connected to transmission amplifiercircuits 10 and 20 is adjacent to switches 41 and 42, and thus radiofrequency module 1A can be miniaturized. A control line that connects PAcontrol circuit 80 and switch 41 and a control line that connects PAcontrol circuit 80 and switch 42 can be shortened, and thus noisegenerated from the control lines can be reduced.

Note that semiconductor IC 70 may not include at least one switch out ofswitches 41 and 42.

In radio frequency module 1A according to this example, low noiseamplifier 30 and switches 43 and 44 are included in single semiconductorIC 75, and semiconductor IC 75 is disposed on principal surface 91 b.Accordingly, low noise amplifier 30 and switches 43 and 44 disposed onthe reception paths are adjacent to one another, and thus radiofrequency module 1A can be miniaturized.

Note that semiconductor IC 75 may not include at least one switch out ofswitches 43 and 44.

Note that external-connection terminals 150 may be columnar electrodespassing through resin member 93 in the z-axis direction as illustratedin FIGS. 3A and 3B, or may be bump electrodes 160 formed on principalsurface 91 b as in radio frequency module 1B according to Variation 4illustrated in FIG. 5. In this case, resin member 93 may not be providedon principal surface 91 b.

In each of radio frequency module 1A according to Example 1 and radiofrequency modules 1D to 1F according to Variations 1 to 3,external-connection terminals 150 may be disposed on principal surface91 a. In radio frequency module 1B according to Variation 4, bumpelectrodes 160 may be disposed on principal surface 91 a.

[3. Arrangement of Circuit Elements of Radio Frequency Module 1CAccording to Example 2]

FIG. 6 is a schematic diagram illustrating a planar configuration ofradio frequency module 1C according to Example 2. Note that (a) of FIG.6 illustrates a layout of circuit elements when principal surface 91 aout of principal surfaces 91 a and 91 b on opposite sides of moduleboard 91 is viewed from the positive z-axis. On the other hand, (b) ofFIG. 6 is a perspective view of a layout of circuit elements whenprincipal surface 91 b is viewed from the positive z-axis.

Radio frequency module 1C according to Example 2 shows a specificarrangement of circuit elements included in radio frequency module 1according to the embodiment.

Radio frequency module 1C according to this example is different fromradio frequency module 1A according to Example 1, only in the locationof semiconductor IC 70. The following description of radio frequencymodule 1C according to this example focuses on differences from radiofrequency module 1A according to Example 1 while a description of thesame points is omitted.

As illustrated in FIG. 6, in radio frequency module 1C according to thisexample, power amplifiers 10A and 20A, output transformers 15 and 25,duplexers 61, 62, and 63, and matching circuits 51, 52, 53, and 54 aredisposed on principal surface 91 a (the first principal surface) ofmodule board 91. On the other hand, PA control circuit 80, low noiseamplifier 30, and switches 41, 42, 43, and 44 are disposed on principalsurface 91 b (the second principal surface) of module board 91.

Thus, in this example, power amplifiers 10A and 20A are mounted onprincipal surface 91 a (the first principal surface). On the other hand,switch 42 is mounted on principal surface 91 b (the second principalsurface).

Power amplifier 10A is an example of a first power amplifier thatamplifies a transmission signal in the first frequency band thatincludes communication bands A and B, and power amplifier 20A is anexample of a second power amplifier that amplifies a transmission signalin the second frequency band that includes communication band C. In thisexample, the first frequency band (communication bands A and B) is lowerthan the second frequency band (communication band C).

In radio frequency module 1C according to this example, in a plan viewof module board 91, the footprint of power amplifier 10A at leastpartially overlaps the footprint of switch 42, and the footprint ofpower amplifier 20A does not overlap the footprint of switch 42.

Out of power amplifiers 10A and 20A, power amplifier 20A that amplifiesa transmission signal having a higher frequency consumes more power.Thus, a heat dissipation member such as heat-dissipating via-conductor95V is desirably disposed in a region included in principal surface 91 bthat overlaps the footprint of power amplifier 20A. On the other hand,from a viewpoint of reducing transfer loss of transmission signals insignal lines that connect power amplifiers 10A and 20A and switch 42,the signal lines are desirably short.

According to the above configuration, the control line can be shortenedsince the footprint of power amplifier 10A at least partially overlapsthe footprint of switch 42, and the footprint of power amplifier 20Adoes not overlap the footprint of switch 42 so that switch 42 can beprevented from being damaged by heat dissipated from power amplifier 20Awhile heat dissipation of power amplifier 20A improves.

In radio frequency module 1C according to this example, as illustratedin FIG. 6, output transformer 15 is larger than output transformer 25.Note that “output transformer 15 is larger than output transformer 25”means that the volume of output transformer 15 is greater than thevolume of output transformer 25. In the above relation in which thevolume of output transformer 15 is greater than that of outputtransformer 25, the footprint of power amplifier 10A at least partiallyoverlaps the footprint of switch 42, and the footprint of poweramplifier 20A does not overlap the footprint of switch 42.

Out of output transformers 15 and 25, output transformer 25 that outputsa transmission signal having a higher frequency has a smaller volume.According to the above configuration, the control line can be shortenedsince the footprint of power amplifier 10A at least partially overlapsthe footprint of switch 42, and the footprint of power amplifier 20Adoes not overlap the footprint of switch 42 so that switch 42 can beprevented from being damaged by heat dissipated from power amplifier 20Awhile heat dissipation of power amplifier 20A improves.

[4. Advantageous Effects and Others]

As described above, radio frequency module 1 according to the presentembodiment includes: module board 91 that includes principal surfaces 91a and 91 b on opposite sides of module board 91; power amplifier 10Aconfigured to amplify a transmission signal in a first frequency band;power amplifier 20A configured to amplify a transmission signal in asecond frequency band different from the first frequency band; andswitch 42 connected to an output terminal of power amplifier 10A and anoutput terminal of power amplifier 20A. Power amplifiers 10A and 20A aredisposed on principal surface 91 a, and switch 42 is disposed onprincipal surface 91 b.

According to this configuration, power amplifiers 10A and 20A, andswitch 42 that passes output signals from amplifiers 10A and 20A aremounted on the two sides, and thus radio frequency module 1A can beminiaturized. Switch 42 that has off-capacitance between a commonterminal and a selection terminal that are not connected and poweramplifiers 10A and 20A are disposed with module board 91 being locatedtherebetween. Accordingly, transmission signals output from poweramplifiers 10A and 20A can be prevented from leaking to an unconnectedtransmission or reception path via the off-capacitance. Consequently,deterioration in the quality of radio frequency signals output frompower amplifiers 10A and 20A can be reduced.

Radio frequency module 1 further includes transmission filters 61T and62T, and switch 42 is configured to switch at least connection of poweramplifier 10A between transmission filter 61T and transmission filter62T.

Radio frequency module 1 may further include a plurality ofexternal-connection terminals 150 disposed on principal surface 91 b.

Accordingly, on principal surface 91 b that faces a motherboard out ofprincipal surfaces 91 a and 91 b, power amplifiers 10A and 20A whoseheights are not readily decreased are not disposed, and switch 42 whoseheight is readily decreased is disposed, and thus the height of radiofrequency module 1 as a whole can be decreased.

Radio frequency module 1 may further include heat-dissipatingvia-conductor 95V connected to at least one of ground electrodes ofpower amplifiers 10A and 20A, heat-dissipating via-conductor 95Vextending from principal surface 91 a to principal surface 91 b.Heat-dissipating via-conductor 95V may be connected, on principalsurface 91 b, to an external-connection terminal having a groundpotential out of external-connection terminals 150.

According to this configuration, when power amplifier 10A is mounted onprincipal surface 91 a, power amplifier 10A and external-connectionterminal 150 can be connected through heat-dissipating via-conductor95V. Accordingly, as heat dissipation paths for power amplifier 10A, aheat dissipation path extending along only a planar line pattern in thexy plane direction and having high heat resistance can be excluded fromlines on and in module board 91. Thus, miniaturized radio frequencymodule 1 having improved heat dissipation from power amplifier 10A tothe motherboard can be provided.

Radio frequency module 1 may further include low noise amplifier 30disposed on principal surface 91 b and configured to amplify a receptionsignal. In a plan view of module board 91, an external-connectionterminal having a ground potential may be disposed between switch 42 andlow noise amplifier 30, out of external-connection terminals 150.

According to this configuration, plural external-connection terminals150 used as ground electrodes are disposed between low noise amplifier30 that greatly affects reception sensitivity of the reception circuitsand switch 42 that passes high-power transmission signals, and thusdeterioration in reception sensitivity due to transmission signals andharmonics thereof can be reduced.

In radio frequency module 1A, in a plan view of module board 91, thefootprint of power amplifier 10A may at least partially overlap thefootprint of switch 42, and the footprint of power amplifier 20A may atleast partially overlap the footprint of switch 42.

According to this configuration, a transmission signal line thatconnects power amplifier 10A and switch 42 and a transmission signalline that connects power amplifier 20A and switch 42 can be shortened,and thus transfer loss of transmission signals can be reduced.

In radio frequency module 1C, the first frequency band is lower than thesecond frequency band, and in a plan view of module board 91, thefootprint of power amplifier 10A may at least partially overlap thefootprint of switch 42, and the footprint of power amplifier 20A may notoverlap the footprint of switch 42.

Out of power amplifiers 10A and 20A, power amplifier 20A that amplifiesa transmission signal having a higher frequency consumes more power.Thus, a heat dissipation member such as heat-dissipating via-conductor95V is desirably disposed in a region included in principal surface 91 bthat overlaps the footprint of power amplifier 20A. According to theabove configuration, the control line can be shortened since thefootprint of power amplifier 10A at least partially overlaps thefootprint of switch 42, and the footprint of power amplifier 20A doesnot overlap the footprint of switch 42 so that switch 42 can beprevented from being damaged by heat dissipated from power amplifier 20Awhile heat dissipation of power amplifier 20A improves.

Radio frequency module 1 may further include: output transformer 15 thatincludes primary coil 15 a and secondary coil 15 b; and outputtransformer 25 that includes primary coil 25 a and secondary coil 25 b.Power amplifier 10A may include amplifying elements 12 and 13. Poweramplifier 20A may include amplifying elements 22 and 23. An end ofprimary coil 15 a may be connected to an output terminal of amplifyingelement 12. Another end of primary coil 15 a may be connected to anoutput terminal of amplifying element 13. An end of secondary coil 15 bmay be connected to an output terminal of power amplifier 10A. An end ofprimary coil 25 a may be connected to an output terminal of amplifyingelement 22. Another end of primary coil 25 a may be connected to anoutput terminal of amplifying element 23. An end of secondary coil 25 bmay be connected to an output terminal of power amplifier 20A. Poweramplifier 10A and output transformer 15 may be included in transmissionamplifier circuit 10, and power amplifier 20A and output transformer 25may be included in transmission amplifier circuit 20.

According to this, amplifying elements 12 and 13 operate in antiphaserelationship with respect to each other, and thus a decrease in powergain of transmission amplifier circuit 10 can be reduced. Further,amplifying elements 22 and 23 operate in antiphase relationship withrespect to each other, and thus a decrease in power gain of transmissionamplifier circuit 20 can be reduced. Further, a non-inverted signal andan inverted signal amplified by amplifying elements 12 and 13 arecombined, and a non-inverted signal and an inverted signal amplified byamplifying elements 22 and 23 are combined. Thus, unnecessary waves suchas harmonic components, for instance, in radio frequency module 1, canbe decreased.

In radio frequency module 1C, output transformer 15 may be larger thanoutput transformer 25, and in a plan view of module board 91, thefootprint of power amplifier 10A may at least partially overlap thefootprint of switch 42, and the footprint of power amplifier 20A may notoverlap the footprint of switch 42.

Out of output transformers 15 and 25, output transformer 25 that outputsa transmission signal having a higher frequency has a smaller volume.According to the above configuration, the signal line can be shortenedsince the footprint of power amplifier 10A at least partially overlapsthe footprint of switch 42, and the footprint of power amplifier 20Adoes not overlap the footprint of switch 42 so that switch 42 can beprevented from being damaged by heat dissipated from power amplifier 20Awhile heat dissipation of power amplifier 20A improves.

In radio frequency module 1, in a plan view of module board 91,footprints of power amplifiers 10A and 20A may not each overlap both offootprints of output transformers 15 and 25.

Output transformers 15 and 25 each need to have a high Q factor tohandle a high-power transmission signal, and thus desirably, magneticfields formed by output transformers 15 and 25 do not change due topower amplifiers 10A and 20A being adjacent thereto. According to theabove configuration, power amplifiers 10A and 20A are not disposed inregions where the transformers are disposed, and thus the Q factors ofthe inductors included in output transformers 15 and 25 can bemaintained high.

In radio frequency module 1, output transformers 15 and 25 may bedisposed on principal surface 91 a, and in the plan view of module board91, no circuit component may be disposed in a region included inprincipal surface 91 b that overlaps the footprint of output transformer15, and no circuit component may be disposed in a region included inprincipal surface 91 b that overlaps the footprint of output transformer25.

According to this configuration, no circuit component is disposed in theregions in principal surface 91 b, and thus the Q factors of theinductors included in output transformers 15 and 25 can be maintainedhigh.

In radio frequency module 1, output transformers 15 and 25 may bedisposed on principal surface 91 b, and in the plan view of module board91, no circuit component may be disposed in a region included inprincipal surface 91 a that overlaps the footprint of output transformer15, and no circuit component may be disposed in a region included inprincipal surface 91 a that overlaps the footprint of output transformer25.

According to this configuration, no circuit component is disposed in theregions in principal surface 91 a, and thus the Q factors of theinductors included in output transformers 15 and 25 can be maintainedhigh.

In radio frequency module 1, output transformers 15 and 25 may be formedinside of module board 91, between principal surface 91 a and principalsurface 91 b, and in the plan view of module board 91, no circuitcomponent may be disposed in a region included in principal surface 91 athat overlaps the footprint of output transformer 15, no circuitcomponent may be disposed in a region included in principal surface 91 bthat overlaps the footprint of output transformer 15, no circuitcomponent may be disposed in a region included in principal surface 91 athat overlaps the footprint of output transformer 25, and no circuitcomponent may be disposed in a region included in principal surface 91 bthat overlaps the footprint of output transformer 25.

According to this configuration, no circuit component is disposed in theregions in principal surfaces 91 a and 91 b, and thus the Q factors ofthe inductors included in output transformers 15 and 25 can bemaintained high.

In radio frequency module 1, output transformers 15 and 25 may bedisposed inside of module board 91, between principal surface 91 a andprincipal surface 91 b, output transformers 15 and 25 being offsettoward one of principal surface 91 a and principal surface 91 b, and inthe plan view of module board 91, no circuit component may be disposedin a region included in the one of principal surface 91 a and principalsurface 91 b that overlaps the footprint of output transformer 15, nocircuit component may be disposed in a region included in the one ofprincipal surface 91 a and principal surface 91 b that overlaps thefootprint of output transformer 25, a circuit component may be disposedin a region included in a remaining one of principal surface 91 a andprincipal surface 91 b that overlaps the footprint of output transformer15, and a circuit component may be disposed in a region included in theremaining one of principal surface 91 a and principal surface 91 b thatoverlaps the footprint of output transformer 25.

Also in this case, no circuit component is disposed in the above regionsin the one of principal surfaces 91 a and 91 b closer to outputtransformers 15 and 25, and thus the Q factors of the inductors includedin output transformers 15 and 25 can be maintained high.

Communication device 5 includes: antenna 2; RFIC 3 configured to processradio frequency signals transmitted and received by antenna 2; and radiofrequency module 1 configured to transfer the radio frequency signalsbetween antenna 2 and RFIC 3.

According to this configuration, small communication device 5 thatsupports multiband technology can be provided.

Other Embodiments Etc.

The above has described the radio frequency module and the communicationdevice according to the embodiment of the present disclosure, based onan embodiment, examples, and variations, yet the radio frequency moduleand the communication device according to the present disclosure are notlimited to the above embodiment, examples, and variations. The presentdisclosure also encompasses another embodiment achieved by combiningarbitrary elements in the embodiment, the examples, and the variations,variations as a result of applying various modifications that may beconceived by those skilled in the art to the embodiment, the examples,and the variations without departing from the scope of the presentdisclosure, and various apparatuses that include the radio frequencymodule and the communication device.

For example, in the radio frequency modules and the communicationdevices according to the embodiment, the examples, and the variations,another circuit element and another line, for instance, may be disposedbetween circuit elements and paths connecting signal paths that areillustrated in the drawings.

Although only some exemplary embodiments of the present disclosure havebeen described in detail above, those skilled in the art will readilyappreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of the present disclosure. Accordingly, all suchmodifications are intended to be included within the scope of thepresent disclosure.

INDUSTRIAL APPLICABILITY

The present disclosure can be widely used in communication apparatusessuch as mobile phones, as a radio frequency module disposed in afront-end portion, which supports multiband technology.

1. A radio frequency module, comprising: a first transmission inputterminal; a module board that includes a first principal surface and asecond principal surface on opposite sides of the module board; a firstpower amplifier configured to amplify a transmission signal in a firstfrequency band; a second power amplifier configured to amplify atransmission signal in a second frequency band different from the firstfrequency band; a first transmission filter; a second transmissionfilter; a first switch including a first common terminal connected to anoutput terminal of the first power amplifier, a second common terminalconnected to an output terminal of the second power amplifier, a firstselection terminal connected to the first transmission filter, and asecond selection terminal connected to the second transmission filter;and a second switch including a third common terminal connected to thefirst transmission input terminal, a third selection terminal connectedto the first power amplifier, wherein the first power amplifier and thesecond power amplifier are disposed on the first principal surface, thefirst switch is disposed on the second principal surface, and the secondswitch is disposed on the first principal surface or the secondprincipal surface.
 2. The radio frequency module of claim 1, wherein aplurality of external-connection terminals disposed on the secondprincipal surface.
 3. The radio frequency module of claim 2, wherein thesecond switch is disposed on the first principal surface.
 4. The radiofrequency module of claim 2, wherein the second switch is disposed onthe second principal surface.
 5. The radio frequency module of claim 4,wherein the control circuit and the second switch are included in afirst semiconductor integrated circuit.
 6. The radio frequency module ofclaim 4, wherein the first switch and the second switch are included ina first semiconductor integrated circuit.
 7. The radio frequency moduleof claim 4, wherein the control circuit, the first switch and the secondswitch are included in a first semiconductor integrated circuit.
 8. Theradio frequency module of claim 1, further comprising: a secondtransmission input terminal, wherein the second switch includes a fourthcommon terminal connected to the second transmission input terminal. 9.The radio frequency module of claim 8, further comprising: the secondswitch includes a fourth selection terminal connected to the secondamplifier.
 10. The radio frequency module of claim 1, furthercomprising: a heat-dissipating via-conductor connected to at least oneof a ground electrode of the first power amplifier or a ground electrodeof the second power amplifier, the heat-dissipating via-conductorextending from the first principal surface to the second principalsurface.
 11. The radio frequency module of claim 10, wherein theheat-dissipating via-conductor is connected, on the second principalsurface, to an external-connection terminal having a ground potentialout of the plurality of external-connection terminals.
 12. The radiofrequency module according to claim 1, further comprising: the low noiseamplifier configured to amplify a reception signal and disposed on thesecond principal surface.
 13. The radio frequency module of claim 1,further comprising: a first output transformer that includes a firstcoil and a second coil; and a second output transformer that includes athird coil and a fourth coil, wherein the first power amplifier includesa first amplifying element and a second amplifying element, the secondpower amplifier includes a third amplifying element and a fourthamplifying element, the first power amplifier and the first outputtransformer are included in a first transmission amplifier circuit, thesecond power amplifier and the second output transformer are included ina second transmission amplifier circuit, a first end of the first coilis connected to an output terminal of the first amplifying element, asecond end of the first coil is connected to an output terminal of thesecond amplifying element, a first end of the second coil is connectedto an output terminal of the first transmission amplifier circuit, afirst end of the third coil is connected to an output terminal of thethird amplifying element, a second end of the third coil is connected toan output terminal of the fourth amplifying element, and a first end ofthe fourth coil is connected to an output terminal of the secondtransmission amplifier circuit.
 14. The radio frequency module of claim13, wherein the first output transformer is larger than the secondoutput transformer, and in a plan view of the module board, a footprintof the first power amplifier at least partially overlaps a footprint ofthe first switch, and a footprint of the second power amplifier does notoverlap the footprint of the first switch.
 15. The radio frequencymodule of claim 13, wherein in a plan view of the module board, afootprint of the first power amplifier and a footprint of the secondpower amplifier each do not overlap both a footprint of the first outputtransformer and a footprint of the second output transformer.
 16. Theradio frequency module of claim 15, wherein the first output transformerand the second output transformer are disposed on the first principalsurface, and in the plan view of the module board, no circuit componentis disposed in a region of the second principal surface that overlapsthe footprint of the first output transformer, and no circuit componentis disposed in a region of the second principal surface that overlapsthe footprint of the second output transformer.
 17. The radio frequencymodule of claim 15, wherein the first output transformer and the secondoutput transformer are disposed on the second principal surface, and inthe plan view of the module board, no circuit component is disposed in aregion of the first principal surface that overlaps the footprint of thefirst output transformer, and no circuit component is disposed in aregion of the first principal surface that overlaps the footprint of thesecond output transformer.
 18. The radio frequency module of claim 15,wherein the first output transformer and the second output transformerare disposed inside the module board between the first principal surfaceand the second principal surface.
 19. The radio frequency module ofclaim 12, wherein in the plan view of the module board, no circuitcomponent is disposed in a region of the first principal surface thatoverlaps the footprint of the first output transformer, no circuitcomponent is disposed in a region of the second principal surface thatoverlaps the footprint the first output transformer, no circuitcomponent is disposed in a region of the first principal surface thatoverlaps a footprint of the second output transformer, and no circuitcomponent is disposed in a region of the second principal surface thatoverlaps the footprint of the second output transformer.
 20. The radiofrequency module of claim 18, wherein the first output transformer andthe second output transformer are closer to one principal surface of thefirst principal surface and the second principal surface than anotherprincipal surface of the first principal surface and the secondprincipal surface.
 21. The radio frequency module of claim 20, whereinin the plan view of the module board, no circuit component is disposedin a region of the one principal surface that overlaps the footprint ofthe first output transformer, no circuit component is disposed in aregion of the one principal surface that overlaps the footprint of thesecond output transformer, a circuit component is disposed in a regionof the another principal surface that overlaps the footprint of thefirst output transformer, and a circuit component is disposed in aregion of the another principal surface that overlaps the footprint ofthe second output transformer.